参数资料
型号: FDP047AN08
厂商: Fairchild Semiconductor Corporation
英文描述: N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз
中文描述: N沟道UltraFET沟道MOSFET 75V的,80A条,4.7mз
文件页数: 9/10页
文件大小: 246K
代理商: FDP047AN08
2002 Fairchild Semiconductor Corporation
FDP047AN08A0 Rev. A
F
SPICE Thermal Model
REV 23 March 2002
FDP047AN08A0T
CTHERM1 th 6 6.45e-3
CTHERM2 6 5 3e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.65e-2
CTHERM5 3 2 4.85e-2
CTHERM6 2 tl 1e-1
RTHERM1 th 6 3.24e-3
RTHERM2 6 5 8.08e-3
RTHERM3 5 4 2.28e-2
RTHERM4 4 3 1e-1
RTHERM5 3 2 1.1e-1
RTHERM6 2 tl 1.4e-1
SABER Thermal Model
SABER thermal model FDP047AN08A0T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.45e-3
ctherm.ctherm2 6 5 = 3e-2
ctherm.ctherm3 5 4 = 1.4e-2
ctherm.ctherm4 4 3 = 1.65e-2
ctherm.ctherm5 3 2 = 4.85e-2
ctherm.ctherm6 2 tl = 1e-1
rtherm.rtherm1 th 6 = 3.24e-3
rtherm.rtherm2 6 5 = 8.08e-3
rtherm.rtherm3 5 4 = 2.28e-2
rtherm.rtherm4 4 3 = 1e-1
rtherm.rtherm5 3 2 = 1.1e-1
rtherm.rtherm6 2 tl = 1.4e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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相关代理商/技术参数
参数描述
FDP047AN08A0 功能描述:MOSFET 75V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047AN08A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
FDP047AN08A0_F102 功能描述:MOSFET SNGL NCH 75V 4.7MOHM ULTRAFET TRENCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP047AN08A0_G 制造商:Fairchild Semiconductor Corporation 功能描述:75V N-Channel PowerTrenchR MOSFET
FDP047N08 功能描述:MOSFET 75V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube