- 您现在的位置：买卖IC网 > PDF目录375778 > FDP100N10 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET PDF资料下载
参数资料
| 型号： | FDP100N10 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 464K |
| 代理商： | FDP100N10 |
tm
July 2007
F
2007 Fairchild Semiconductor Corporation
FDP100N10 Rev. A1
www.fairchildsemi.com
1
FDP100N10
N-Channel PowerTrench
MOSFET
100V, 75A, 10m
Features
R
DS(on)
= 8.2m
( Typ.)@ V
GS
= 10V, I
D
= 75A
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handing capability
RoHS compliant
Applications
DC to DC converters / Synchronous Rectification
Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
TO-220
G
S
D
D
G
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
Parameter
Ratings
100
±20
75
300
365
4.8
208
1.4
-55 to +175
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
o
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
-Continuous (T
C
= 75
o
C)
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
*When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Ratings
0.72
0.5
62.5
Units
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
o
C/W
相关PDF资料 |
PDF描述 |
|---|---|
| FDP10AN06A0 | N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз |
| FDB10AN06A0 | CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100 |
| FDP120AN15A0 | N-Channel PowerTrench MOSFET |
| FDD120AN15A | N-Channel PowerTrench MOSFET |
| FDD120AN15A0 | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP100N10_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 75A, 10m?? |
| FDP10AN06A0 | 功能描述:MOSFET 60V 75a 0.0105Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP10G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP10N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 9A, 0.85Ω |
| FDP10N60NZ | 功能描述:MOSFET 600N-Channel MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。