- 您现在的位置：买卖IC网 > PDF目录375778 > FDP100N10 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET PDF资料下载
参数资料
| 型号： | FDP100N10 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 464K |
| 代理商： | FDP100N10 |
F
FDP100N10 Rev. A1
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
BV
DSS
BV
DSS
/
T
J
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g(tot)
Total Gate Charge at 10V
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
V
SD
Drain to Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Device Marking
FDP100N10
Device
FDP100N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250
μ
A, Referenced to 25
o
C
100
-
-
V
-
0.1
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 150
o
C
V
GS
= ±20V, V
DS
= 0V
-
-
-
-
-
-
1
μ
A
500
±100
I
GSS
Gate to Body Leakage Current
nA
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 75A
V
DS
= 10V, I
D
= 37.5A
(Note 4)
2.5
-
-
-
4.5
10
-
V
8.2
110
m
S
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
-
5500
530
220
76
30
20
7300
710
325
100
-
-
pF
pF
pF
nC
nC
nC
V
DS
= 50V, I
D
= 75A
V
= 10V
(Note 4, 5)
V
DD
= 50V, I
D
= 75A
V
GS
= 10V, R
GEN
= 25
(Note 4, 5)
-
-
-
-
70
265
125
115
150
540
260
240
ns
ns
ns
ns
-
-
-
-
-
-
-
-
75
300
1.25
-
-
A
A
V
ns
nC
V
GS
= 0V, I
SD
= 75A
V
GS
= 0V, I
SD
= 75A
dI
F
/dt = 100A/
μ
s
(Note 4)
71
164
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.13mH, I
AS
= 75A, V
= 25V, R
G
= 25
, Starting T
J
= 25
o
C
3: I
≤
75A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
, Starting T
J
= 25
o
C
4: Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5: Essentially Independent of Operating Temperature Typical Characteristics
相关PDF资料 |
PDF描述 |
|---|---|
| FDP10AN06A0 | N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз |
| FDB10AN06A0 | CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100 |
| FDP120AN15A0 | N-Channel PowerTrench MOSFET |
| FDD120AN15A | N-Channel PowerTrench MOSFET |
| FDD120AN15A0 | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP100N10_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 100V, 75A, 10m?? |
| FDP10AN06A0 | 功能描述:MOSFET 60V 75a 0.0105Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP10G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP10N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 9A, 0.85Ω |
| FDP10N60NZ | 功能描述:MOSFET 600N-Channel MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。