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参数资料
| 型号： | FDD120AN15A |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | N沟道的PowerTrench MOSFET的 |
| 文件页数： | 1/11页 |
| 文件大小： | 251K |
| 代理商： | FDD120AN15A |
2002 Fairchild Semiconductor Corporation
September 2002
FDP120AN15A0 / FDD120AN15A0
Rev. B
F
FDP120AN15A0 / FDD120AN15A0
N-Channel PowerTrench
MOSFET
150V, 14A, 120m
Features
r
DS(ON)
= 101m
(Typ.), V
GS
= 10V, I
D
= 4A
Q
g
(tot) = 11.2nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82845
Applications
DC/DC Converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
150
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V) with R
θ
JA
= 52
o
C/W
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
14
9.7
2.8
A
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
122
65
0.43
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-220
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-220 (Note 2)
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.31
100
62
52
o
C/W
o
C/W
o
C/W
o
C/W
D
G
S
TO-252AA
FDD SERIES
GATE
SOURCE
(FLANGE)
DRAIN
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDD120AN15A0 | 功能描述:MOSFET 150V 14a 0.120 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDD120AN15A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD120AN15A0_F085 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 150V 14A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / TO-252A03, SINGLE, NCH, 150V,0.120 OHM POWERTRENCH MOSFET |
| FDD12-12D4 | 制造商:SPC Multicomp 功能描述:CONVERTER DC/DC 12W +/-12V 制造商:SPC Multicomp 功能描述:CONVERTER, DC/DC, 12W, +/-12V 制造商:SPC Multicomp 功能描述:CONVERTER, DC/DC, 12W, +/-12V; DC / DC Converter Type:Isolated POL; DC / DC Converter Output Type:Fixed; Input Voltage DC Min:10V; Input Voltage DC Max:36V; No. of Outputs:2; Output Voltage Nom.:12V, -12V; Output Current Max:500mA, ;RoHS Compliant: Yes |
| FDD12-12D4 | 制造商:UNBRANDED 功能描述:DC/DC CONVERTER 12W +/-12V |
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