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参数资料
| 型号： | FDP12N50 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
| 中文描述： | 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 348K |
| 代理商： | FDP12N50 |
tm
June 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50 Rev. A
www.fairchildsemi.com
1
TM
FDP12N50 / FDPF12N50
N-Channel MOSFET
500V, 11.5A, 0.65
Ω
Features
R
DS(on)
= 0.55
Ω
(Typ.)@ V
GS
= 10V, I
D
= 6A
Low gate charge ( Typ. 22nC)
Low C
rss
( Typ. 11pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
FDP12N50
FDPF12N50
500
±30
11.5 *
6.9 *
46 *
456
11.5
16.7
4.5
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
11.5
6.9
46
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
165
1.33
42
0.3
T
J
, T
STG
-55 to +150
T
L
300
o
C
Symbol
Parameter
FDP12N50
FDPF12N50
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction to Case
0.75
3.0
o
C/W
Thermal Resistance, Case to Sink Typ.
0.5
-
Thermal Resistance, Junction to Ambient
62.5
62.5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP12N50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.65?? |
| FDP12N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.7ヘ |
| FDP12N50NZ | 功能描述:MOSFET 500V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP12N60NZ | 功能描述:MOSFET 600V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP13AN06A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз |
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