参数资料
型号: FDP12N50
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: N-Channel MOSFET 500V, 11.5A, 0.65ヘ
中文描述: 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 10/10页
文件大小: 348K
代理商: FDP12N50
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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FastvCore
FPS
FRFET
Global Power Resource
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SM
Green FPS
e-Series
GTO
i-Lo
IntelliMAX
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MicroFET
MicroPak
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Power247
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Power-SPM
PowerTrench
Programmable Active Droop
QFET
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QT Optoelectronics
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RapidConfigure
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SuperSOT
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Formative or In Design
Definition
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Rev. I29
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相关代理商/技术参数
参数描述
FDP12N50_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.65??
FDP12N50F 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 11.5A, 0.7ヘ
FDP12N50NZ 功能描述:MOSFET 500V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP12N60NZ 功能描述:MOSFET 600V N-Chan MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP13AN06A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 60V, 62A, 13.5mз