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| 型号： | FDPF14N30 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 300V N-Channel MOSFET |
| 中文描述： | 14 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 315K |
| 代理商： | FDPF14N30 |
2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
14A, 300V, R
DS(on)
= 0.29
Ω
@V
GS
= 10 V
Low gate charge ( typical 18 nC)
Low C
rss
( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP14N30
FDPF14N30
Unit
V
DSS
I
D
Drain-Source Voltage
300
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
1
4
8.4
1
4 *
8.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
56
56
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
330
mJ
Avalanche Current
(Note 1)
14
A
Repetitive Avalanche Energy
(Note 1)
14
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
140
1.12
35
0.28
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP14N30
FDPF14N30
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.89
3.56
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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| FDPF14N30T | 功能描述:MSOFET N-CH 300V 14A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:UniFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| FDPF15N65YDTU | 功能描述:MOSFET 650V 15A N-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF16N50 | 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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