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参数资料
| 型号： | FDP15N65_0610 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 650V N-Channel MOSFET |
| 中文描述： | ?650V N沟道MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 1335K |
| 代理商： | FDP15N65_0610 |
UniFET
TM
October 2006
2006 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. A
1
www.fairchildsemi.com
F
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
15A, 650V, R
DS(on)
= 0.44
@V
GS
= 10 V
Low gate charge ( typical 48.5 nC)
Low C
rss
( typical 23.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDP15N65
FDPF15N65
Unit
V
DSS
I
D
Drain-Source Voltage
650
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
15
9.5
15*
9.5*
A
A
I
DM
Drain Current
(Note 1)
60
60*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
637
mJ
Avalanche Current
(Note 1)
15
A
Repetitive Avalanche Energy
(Note 1)
25.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
250
2.0
73.5
0.59
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
FDP15N65
FDPF15N65
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.5
1.7
°
C/W
Thermal Resistance, Case-to-Sink
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
* Drain current limited by maximum junction termperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP16AN08A0 | 功能描述:MOSFET 75V 58a 0.016 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP16G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP16N50 | 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP16N50_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
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