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参数资料
| 型号： | FDP16N50 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 1004K |
| 代理商： | FDP16N50 |
2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
16A, 500V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 32 nC)
Low C
rss
( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
9.6
16 *
9.6
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
64
64
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
20
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
200
1.59
52
0.41
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.63
2.4
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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| FDP20N50F | N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP16N50_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50U | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel UniFETTM Ultra FRFET MOSFET |
| FDP16T | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP-16-T | 功能描述:集管和线壳 16pos. DIP Plug .100 x .300 RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
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