- 您现在的位置：买卖IC网 > PDF目录375778 > FDP20N50F (FAIRCHILD SEMICONDUCTOR CORP) N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ PDF资料下载
参数资料
| 型号： | FDP20N50F |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ |
| 中文描述： | 20 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 786K |
| 代理商： | FDP20N50F |
tm
October 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDP20N50F / FDPF20N50FT Rev. A1
www.fairchildsemi.com
1
TM
FDP20N50F / FDPF20N50FT
N-Channel MOSFET, FRFET
500V, 20A, 0.26
Features
R
DS(on)
= 0.22
( Typ.)@ V
GS
= 10V, I
D
= 10A
Low gate charge ( Typ. 50nC)
Low C
rss
( Typ. 27pF)
Fast reverse recovery switching of built-in diode
Fast switching
100% avalanche tested
Improve dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
D
G
S
TO-220F
FDPF Series
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
FDP20N50F
FDPF20N50FT
500
±30
20*
12.9*
80*
1110
20
25
4.5
38.5
0.3
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
20
12.9
80
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
250
2.0
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
FDP20N50F
FDPF20N50FT
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction to Case
0.5
3.3
o
C/W
Thermal Resistance, Case to Sink Typ.
0.5
-
Thermal Resistance, Junction to Ambient
62.5
62.5
相关PDF资料 |
PDF描述 |
|---|---|
| FDP20N50 | 500V N-Channel MOSFET |
| FDP20N50_07 | 500V N-Channel MOSFET |
| FDPF20N50 | 500V N-Channel MOSFET |
| FDP2552 | N-Channel PowerTrench MOSFET 150V, 37A, 36mз |
| FDB2552 | N-Channel PowerTrench MOSFET 150V, 37A, 36mз |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP20N50F_11 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 20A, 0.26?? |
| FDP20N50T | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:PFC+PWM Combination Controller |
| FDP20T | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP-20-T | 功能描述:集管和线壳 20pos. DIP Plug .100 x .300 RoHS:否 产品种类:1.0MM Rectangular Connectors 产品类型:Headers - Pin Strip 系列:DF50 触点类型:Pin (Male) 节距:1 mm 位置/触点数量:16 排数:1 安装风格:SMD/SMT 安装角:Right 端接类型:Solder 外壳材料:Liquid Crystal Polymer (LCP) 触点材料:Brass 触点电镀:Gold 制造商:Hirose Connector |
| FDP22N50N | 功能描述:MOSFET UniFETII 500V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。