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参数资料
| 型号： | FDP20N50F |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel MOSFET, FRFET 500V, 20A, 0.26ヘ |
| 中文描述： | 20 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/10页 |
| 文件大小： | 786K |
| 代理商： | FDP20N50F |
F
FDP20N50F / FDPF20N50FT Rev. A1
www.fairchildsemi.com
2
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
FDP20N50F
FDPF20N50FT
Device
FDP20N50F
FDPF20N50FT
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
BV
DSS
/
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, V
GS
= 0V, T
J
= 25
o
C
500
-
-
V
I
D
= 250
μ
A, Referenced to 25
o
C
-
0.7
-
V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
o
C
V
GS
= ±30V, V
DS
= 0V
-
-
-
-
-
-
10
100
±100
μ
A
I
GSS
Gate to Body Leakage Current
nA
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 10A
V
DS
= 20V, I
D
= 10A
(Note 4)
3.0
-
-
-
5.0
0.26
-
V
S
0.22
25
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
2550
350
27
50
14
3390
465
40
65
-
pF
pF
pF
nC
nC
V
DS
= 400V, I
D
= 20A
V
GS
= 10V
(Note 4, 5)
Gate to Drain “Miller” Charge
-
20
-
nC
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 20A
R
G
= 25
(Note 4, 5)
-
-
-
-
45
120
100
60
100
250
210
130
ns
ns
ns
ns
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, I
AS
= 20A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
20A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
-
-
-
-
20
80
1.5
-
-
A
A
V
ns
μ
C
V
GS
= 0V, I
SD
= 20A
V
GS
= 0V, I
SD
= 20A
dI
F
/dt = 100A/
μ
s
(Note 4)
154
0.5
5. Essentially Independent of Operating Temperature Typical Characteristics
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