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参数资料
| 型号： | FDP15N65_0610 |
| 厂商： | Fairchild Semiconductor Corporation |
| 英文描述： | 650V N-Channel MOSFET |
| 中文描述： | ?650V N沟道MOSFET |
| 文件页数： | 10/10页 |
| 文件大小： | 1335K |
| 代理商： | FDP15N65_0610 |
Rev. I21
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PRODUCT STATUS DEFINITIONS
Definition of Terms
FACT Quiet Series
GlobalOptoisolator
GTO
HiSeC
I
2
C
i-Lo
ImpliedDisconnect
IntelliMAX
ISOPLANAR
LittleFET
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Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
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First Production
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
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Full Production
This datasheet contains final specifications. Fairchild
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This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
相关PDF资料 |
PDF描述 |
|---|---|
| FDP15N65 | 650V N-Channel MOSFET |
| FDPF15N65 | 650V N-Channel MOSFET |
| FDP16AN08A0 | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| FDB16AN08A0 | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| FDP16N50 | 500V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP16AN08A0 | 功能描述:MOSFET 75V 58a 0.016 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP16G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP16N50 | 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP16N50_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
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