- 您现在的位置：买卖IC网 > PDF目录375778 > FDP15N65 (FAIRCHILD SEMICONDUCTOR CORP) 650V N-Channel MOSFET PDF资料下载
参数资料
| 型号： | FDP15N65 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 650V N-Channel MOSFET |
| 中文描述： | 16 A, 650 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 1312K |
| 代理商： | FDP15N65 |
2006 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. A
1
www.fairchildsemi.com
F
February 2006
UniFET
TM
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
15A, 650V, R
DS(on)
= 0.44
@V
GS
= 10 V
Low gate charge ( typical 48.5 nC)
Low C
rss
( typical 23.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDP15N65
FDPF15N65
Unit
V
DSS
I
D
Drain-Source Voltage
650
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
15
9.5
15*
9.5*
A
A
I
DM
Drain Current
(Note 1)
60
60*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
637
mJ
Avalanche Current
(Note 1)
15
A
Repetitive Avalanche Energy
(Note 1)
25.0
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
250
2.0
73.5
0.59
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
FDP15N65
FDPF15N65
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.5
1.7
°
C/W
Thermal Resistance, Case-to-Sink
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
* Drain current limited by maximum junction termperature.
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF15N65 | 650V N-Channel MOSFET |
| FDP16AN08A0 | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| FDB16AN08A0 | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| FDP16N50 | 500V N-Channel MOSFET |
| FDPF16N50 | 500V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP15N65_0610 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET |
| FDP15N65_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:650V N-Channel MOSFET |
| FDP16AN08A0 | 功能描述:MOSFET 75V 58a 0.016 Ohms/VGS=10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP16G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP16N50 | 功能描述:MOSFET 500V 16A NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。