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参数资料
| 型号： | FDB16AN08A0 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 75V, 58A, 16mз |
| 中文描述： | 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263AB, 3 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 267K |
| 代理商： | FDB16AN08A0 |
2002 Fairchild Semiconductor Corporation
July 2002
FDP16AN08A0 / FDB16AN08A0 Rev. A1
F
FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench
MOSFET
75V, 58A, 16m
Features
r
DS(ON)
= 13m
(Typ.), V
GS
= 10V, I
D
= 58A
Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82660
Applications
42V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
Electronic Valve Train Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
75
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
58
44
9
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
117
135
0.9
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.11
62
43
o
C/W
o
C/W
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
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