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| 型号： | FDP14N30 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 300V N-Channel MOSFET |
| 中文描述： | 14 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 315K |
| 代理商： | FDP14N30 |
2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
14A, 300V, R
DS(on)
= 0.29
Ω
@V
GS
= 10 V
Low gate charge ( typical 18 nC)
Low C
rss
( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP14N30
FDPF14N30
Unit
V
DSS
I
D
Drain-Source Voltage
300
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
1
4
8.4
1
4 *
8.4
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
56
56
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
330
mJ
Avalanche Current
(Note 1)
14
A
Repetitive Avalanche Energy
(Note 1)
14
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
140
1.12
35
0.28
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP14N30
FDPF14N30
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.89
3.56
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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