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参数资料
| 型号： | FDN5630 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60V N-Channel PowerTrench MOSFET |
| 中文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 254K |
| 代理商： | FDN5630 |
F
FDN5630 Rev. C
March 2000
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25 C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
60
±
20
1.7
10
0.5
0.46
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
5630
Device
FDN5630
Reel Size
7
Tape Width
8mm
Quantity
3000 units
G
S
D
G
D
S
SuperSOT -3
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low R
DS(ON)
in a small SOT23
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
R
DS(ON)
specifications. The result is higher overall
efficiency with less board space.
Applications
DC/DC converter
Motor drives
Features
1.7 A, 60 V. R
DS(ON)
= 0.100
@ V
GS
= 10 V
R
DS(ON)
= 0.120
@ V
GS
= 6 V.
Optimized for use in high frequency DC/DC converters.
Low gate charge.
Very fast switching.
SuperSOT
TM
- 3 provides low R
DS(ON)
in SOT23 footprint.
FDN5630
60V N-Channel PowerTrench
MOSFET
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN5630N | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:SuperSOT -3 |
| FDN5632N | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN5632N_F085 | 功能描述:MOSFET Trans MOS N-Ch 60V 1.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-N8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ECONOMY 2M FREE-CU |
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