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参数资料
| 型号： | FDN5630 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60V N-Channel PowerTrench MOSFET |
| 中文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 254K |
| 代理商： | FDN5630 |
F
FDN5630 Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0
2
4
6
8
10
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
=5V
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE VOLTAGE (V)
I
S
,
T
J
=125
o
C
25
o
C
-55
o
C
V
GS
=0
0.9
1
1.1
1.2
1.3
1.4
1.5
0
2
4
6
8
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 4.5V
10V
6.0V
7.0V
5.0V
0
0.05
0.1
0.15
0.2
0.25
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.7A
T
A
= 125
o
C
T
A
= 25
o
C
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
6.0V
5.0V
4.5V
4.0V
3.5V
V
GS
= 10V
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
=1.7A
V
GS
= 10V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN5630N | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:SuperSOT -3 |
| FDN5632N | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN5632N_F085 | 功能描述:MOSFET Trans MOS N-Ch 60V 1.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-N8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ECONOMY 2M FREE-CU |
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