- 您现在的位置：买卖IC网 > PDF目录375778 > FDN5630 (FAIRCHILD SEMICONDUCTOR CORP) 60V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDN5630 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 60V N-Channel PowerTrench MOSFET |
| 中文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 254K |
| 代理商： | FDN5630 |
F
FDN5630 Rev. C
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
0.0001
4
8
12
16
20
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0
2
4
6
8
10
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 1.7A
V
DS
= 10V
20V
30V
0
100
200
300
400
500
600
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
10ms
1ms
100
μ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
相关PDF资料 |
PDF描述 |
|---|---|
| FDP047AN08A0 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| FDP047AN08 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| FDP060AN08A0 | N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз |
| FDB060AN08A0 | N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз |
| FDP100N10 | N-Channel PowerTrench㈢ MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN5630N | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:SuperSOT -3 |
| FDN5632N | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDN5632N_F085 | 功能描述:MOSFET Trans MOS N-Ch 60V 1.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FD-N8 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ECONOMY 2M FREE-CU |
发布紧急采购，3分钟左右您将得到回复。