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参数资料
| 型号： | FDN371N |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 2500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 84K |
| 代理商： | FDN371N |
September 2001
2001 Fairchild Semiconductor Corporation
FDN371N Rev C (W)
FDN371N
20V N-Channel PowerTrench
MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Load switch
Battery protection
Power management
Features
2.5 A, 20 V.
R
DS(ON)
= 50 m
@ V
GS
= 4.5 V
R
DS(ON)
= 60 m
@ V
GS
= 2.5 V
Low gate charge (7.6 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
12
2.5
10
0.5
0.46
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
371
FDN371N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN372S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN537N | 功能描述:MOSFET 30V Single N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN5618 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
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