- 您现在的位置：买卖IC网 > PDF目录375778 > FDN372S (FAIRCHILD SEMICONDUCTOR CORP) 30V N-Channel PowerTrench剖 SyncFET PDF资料下载
参数资料
| 型号： | FDN372S |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30V N-Channel PowerTrench剖 SyncFET |
| 中文描述： | 2600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SUPERSOT-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 142K |
| 代理商： | FDN372S |
September 2002
2002 Fairchild Semiconductor Corporation
FDN372S Rev C(W)
FDN372S
30V N
-
Channel PowerTrench
SyncFET
General Description
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Applications
DC-DC Converter
Motor Drives
Features
2.6 A, 30 V.
R
DS(ON)
= 40 m
@ V
GS
= 10 V
R
DS(ON)
= 50 m
@ V
GS
= 4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
16
2.6
10
0.5
0.46
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
372
FDN372S
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
D
S
G
F
相关PDF资料 |
PDF描述 |
|---|---|
| FDN5618 | 60V P-Channel Logic Level PowerTrench MOSFET |
| FDN5618P | 60V P-Channel Logic Level PowerTrench MOSFET |
| FDN5630 | 60V N-Channel PowerTrench MOSFET |
| FDP047AN08A0 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| FDP047AN08 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDN372S_F095 | 制造商:Fairchild 功能描述:30V/16V, 40/50MO, NCH, SYNCFET |
| FDN372S_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN537N | 功能描述:MOSFET 30V Single N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDN5618 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET |
| FDN5618P | 功能描述:MOSFET SSOT-3 P-CH 60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。