参数资料
型号: FDN361
厂商: Fairchild Semiconductor Corporation
英文描述: N-Channel, Logic Level, PowerTrenchビヌ
中文描述: N沟道,逻辑层次,的PowerTrenchビヌ
文件页数: 4/8页
文件大小: 946K
代理商: FDN361
F
FDN361AN, Rev. C
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Typical Characteristics
(continued)
0
1
2
3
4
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 1.8A
V = 5V
10V
15V
0.1
0.2
0.5
1
2
5
10
30
10
20
50
100
200
500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0 V
C ss
C s
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
RDS(ON LIMIT
V = 10V
SINGLE PULSE
R =270
°
C/W
T = 25
°
C
DC
1s
10ms
100ms
1ms
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R =270
°
C/W
T = 25
°
C
θ
JA
0.0001
0.001
001
0.1
t , TIME (s ec)
1
10
100
300
0.001
0.002
0.005
001
002
005
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270
°
C/W
T - T = P * R J A
D u t y C y c le, D = t / t
P(pk)
t
1
t
2
r
S n g l e P ul s e
D = 05
01
0.05
0.02
0.01
02
2
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相关代理商/技术参数
参数描述
FDN361AN 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDN361AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
FDN361AN 制造商:Fairchild Semiconductor Corporation 功能描述:Transistors MOSFET RoHS Compliant:Yes
FDN361BN 功能描述:MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDN363N 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: