参数资料
型号: FDP090N10
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 100V 75A TO-220
产品目录绘图: MOSFET TO-220 Pkg
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 75A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 116nC @ 10V
输入电容 (Ciss) @ Vds: 8225pF @ 25V
功率 - 最大: 208W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
产品目录页面: 1607 (CN2011-ZH PDF)
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-50 0 50 100 150 200
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 75A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
500
Figure 10. Maximum Drain Current
vs. Case Temperature
120
100
10
100 μ s
1ms
10ms
100ms
100
80
1
Operation in This Area
is Limited by R DS(on)
DC
60
Limited by package
SINGLE PULSE
40
T C = 25 C
T J = 175 C
R θ JC = 0.72 C/W
0.1
o
o
o
20
T C , Case Temperature [ C ]
0.01
0.1
1 10
V DS , Drain-Source Voltage [V]
100
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
0.05
P DM
1. Z θ JC (t) = 0.72 C/W Max.
0.01
0.02
0.01
Single pulse
t 1
t 2
*Notes:
o
2. Duty Factor, D= t 1 /t 2
10
10
10
10
10
10
10
0.001
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1 0
1
, 1
Rectangular Pulse Duration [sec]
?2008 Fairchild Semiconductor Corporation
FDP090N10 Rev. C4
4
www.fairchildsemi.com
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