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参数资料
| 型号： | FDP13AN06A0 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 62A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Product Discontinuation 14/Mar/2011 |
| 标准包装： | 400 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 62A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13.5 毫欧 @ 62A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1350pF @ 25V |
| 功率 - 最大： | 115W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
Typical Characteristics T C = 25°C unless otherwise noted
1000
100
10 μ s
100 μ s
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
10
OPERATION IN THIS
1ms
10
AREA MAY BE
LIMITED BY r DS(ON)
STARTING T J = 150 o C
1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
10ms
0.1
1
10
100
1
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
80
T C = 25 o C
V GS = 20 V
V GS = 10 V
60
60
V GS = 6V
40
T J = 25 o C
T J = 175 o C
T J = -55 o C
40
PULSE DURATION = 80 μ s
20
0
20
0
DUTY CYCLE = 0.5% MAX
V GS = 5V
3
4
5
7
0
0.5
1.0
1.5
2.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
30
25
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
20
15
V GS = 10V
1.5
1.0
10
0
1 0
20
3 0
4 0
5 0
6 0
70
0.5
-80
-40
V GS = 10V, I D =62A
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
4
www.fairchildsemi.com
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相关代理商/技术参数 |
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| FDP13AN06A0_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| FDP13N40 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP13N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54ヘ |
| FDP13N50F_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54?? |
| FDP14AN06LA | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз |
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