参数资料
型号: FDP18N50
厂商: Fairchild Semiconductor
文件页数: 8/10页
文件大小: 0K
描述: MOSFET N-CH 500V 18A TO-220
产品目录绘图: MOSFET TO-220 Pkg
标准包装: 50
系列: UniFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 18A
开态Rds(最大)@ Id, Vgs @ 25° C: 265 毫欧 @ 9A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 60nC @ 10V
输入电容 (Ciss) @ Vds: 2860pF @ 25V
功率 - 最大: 235W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
产品目录页面: 1607 (CN2011-ZH PDF)
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor ’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003
?2012 Fairchild Semiconductor Corporation
FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C2
8
www.fairchildsemi.com
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