- 您现在的位置：买卖IC网 > PDF目录375779 > FDP42AN15A0 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDP42AN15A0 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 5 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 258K |
| 代理商： | FDP42AN15A0 |
2002 Fairchild Semiconductor Corporation
September 2002
FDP42AN15A0 / FDB42AN15A0 Rev. C
F
FDP42AN15A0 / FDB42AN15A0
N-Channel PowerTrench
MOSFET
150V, 35A, 42m
Features
r
DS(ON)
= 36m
(Typ.), V
GS
= 10V, I
D
= 12A
Q
g
(tot) = 33nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82864
Applications
DC/DC Converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
150
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
35
24
5
A
A
A
Figure 4
90
150
1.00
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.0
62
43
o
C/W
o
C/W
o
C/W
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
GATE
DRAIN
SOURCE
相关PDF资料 |
PDF描述 |
|---|---|
| FDB42AN15A0 | N-Channel PowerTrench MOSFET |
| FDP46N30 | DC-DC Converter; Supply Voltage:75V; Output Voltage:5V; Number of Outputs:1; Mounting Type:PC Board; Series:BXA; Efficiency:80%; Leaded Process Compatible:Yes; Output Current:5A; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| FDP51N25 | 250V N-Channel MOSFET |
| FDP52N20 | 200V N-Channel MOSFET |
| FDP55N06 | 60V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP42AN15A0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP42AN15A0_Q | 功能描述:MOSFET 150V 35a .42 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP44N25 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| FDP46N30 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDP4N60NZ | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 600V, 3.8A, 2.5?? |
发布紧急采购，3分钟左右您将得到回复。