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参数资料
| 型号： | FDP52N20 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 52 A, 200 V, 0.049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 746K |
| 代理商： | FDP52N20 |
2005 Fairchild Semiconductor Corporation
FDP52N20 Rev. A
1
www.fairchildsemi.com
F
January 2006
UniFET
FDP52N20
200V N-Channel MOSFET
Features
52A, 200V, R
DS(on)
= 0.049
@V
GS
= 10 V
Low gate charge ( typical 49 nC)
Low C
rss
( typical 66 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
D
G
S
Symbol
Parameter
FDP52N20
Units
V
DSS
I
D
Drain-Source Voltage
200
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
52
A
33
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
208
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
2520
mJ
Avalanche Current
(Note 1)
52
A
Repetitive Avalanche Energy
(Note 1)
35.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
357
W
- Derate above 25°C
2.86
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FDP52N20
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.35
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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