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参数资料
| 型号： | FDP5645 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | CONN RCPT .100 36POS GOLD T/H |
| 中文描述： | 83 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 422K |
| 代理商： | FDP5645 |
March 2000
2000 Fairchild Semiconductor Corporation
FDP5645/FDB5645 Rev B (W)
FDP5645/FDB5645
60V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
80 A, 60 V.
R
DS(ON)
= 0.0095
@ V
GS
= 10 V
R
DS(ON)
= 0.011
@ V
GS
= 6 V.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
High performance trench technology for extremely
low R
DS(ON)
.
175
°
C maximum junction temperature rating.
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
FDP5645 FDB5645
60
±
20
80
300
125
0.83
-65 to +175
+275
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
– Continuous (note 3)
– Pulsed
@ T
C
= 25
°
C
Derate above 25
°
C
Total Power Dissipation
W
P
D
W/
°
C
°
C
°
C
T
J
, T
STG
T
L
Operating and Storage Junction Temperature Range
Maximum lead termperature for soldering purposes,
1/8“ from case for 5 seconds
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.2
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB5645
FDB5645
FDP5645
FDP5645
Reel Size
13”
note 2
Tape width
24mm
Quantity
800 units
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP5645_Q | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP5680 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP5680_Q | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP5690_Q | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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