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参数资料
| 型号： | FDP5800 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 575K |
| 代理商： | FDP5800 |
tm
November 2006
F
2006 Fairchild Semiconductor Corporation
FDP5800 Rev. A
www.fairchildsemi.com
1
FDP5800
N-Channel Logic Level PowerTrench
MOSFET
60V,80A, 6m
Features
R
DS(on)
= 4.6m
(Typ.), V
GS
= 10V, I
D
= 80A
High performance trench technology for extermly low Rdson
Low gate Charge
High power and current handing capability
RoHs Compliant
Applications
Motor/ Body Load Control
Power Train Management
Injection Systems
DC-AC Converters and UPS
TO-220
FDP Series
G
S
D
D
G
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted*
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
60
±20
80
80*
14
320
652
242
1.61
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
I
D
Drain Current
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
= 100
o
C)
-Continuous (T
A
= 25
o
C)
I
DM
E
AS
Drain Current - Pulsed
Single Pulsed Avalanche Energy (Note 1)
Power Dissipation (T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
*Drain current limited by package
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient, 1in
2
copper pad area
0.62
°
C/W
°
C/W
°
C/W
43
Thermal Resistance , Junction to Ambient
62.5
Device Marking
FDP5800
Device
FDP5800
Package
TO220
Reel Size
--
Tape Width
--
Quantity
50
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