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参数资料
| 型号： | FDP5800 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 575K |
| 代理商： | FDP5800 |
F
FDP5800 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
B
VDSS
Drain-Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V, T
J
=25
o
C
V
DS
= 48V
V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
60
--
--
--
--
--
--
--
--
1
V
μ
A
μ
A
nA
I
DSS
Zero Gate Voltage Drain Current
T
J
= 150
°
C
500
±100
I
GSS
Gate-Body Leakage Current, Forward
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V , I
D
= 80A
V
GS
=4.5V , I
D
= 80A
V
GS
= 5V , I
D
= 80A
V
GS
=10V, I
D
= 80A
T
J
= 175
o
C
1.0
--
--
--
--
2.5
6.0
7.2
7.0
V
R
DS(on)
Static Drain-Source On Resistance
4.6
5.9
5.6
m
m
m
--
10.4
12.6
m
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V,V
GS
= 0V
f = 1MHz
--
--
--
--
--
--
--
--
--
--
6890
750
295
1.2
112
58
7.0
23
13
18
9160
1000
445
--
145
--
--
--
--
--
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 30V
I
D
= 80A
I
g
= 1mA
V
DD
= 30V, I
D
= 80A
V
GS
= 10V, R
GEN
= 1.5
--
--
--
--
--
--
37
18
19
55
9
64
85
46
47
120
28
138
ns
ns
ns
ns
ns
ns
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
SD
= 80A
V
GS
= 0V, I
SD
= 40A
V
GS
= 0V, I
SD
= 60A
dI
F
/dt = 100A/
μ
s
--
--
--
--
--
--
58
106
1.25
1.0
--
--
V
V
ns
nC
t
rr
Q
rr
Notes:
1: L = 1mH, I
AS
= 36A, V
DD
= 54V, V
GS
= 10V, R
G
= 25
, Starting T
J
= 25
o
C
Reverse Recovery Time
Reverse Recovery Charge
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