- 您现在的位置：买卖IC网 > PDF目录375779 > FDP5800 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | FDP5800 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 575K |
| 代理商： | FDP5800 |
F
FDP5800 Rev. A
www.fairchildsemi.com
4
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature vs. Temperature
Figure 8. On-Resistance Variation
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
1
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature
[
o
C
]
-80
-40
0
40
80
120
160
200
0.4
0.8
1.2
1.6
2.0
2.4
* Notes :
1. V
GS
= 10V
2. I
D
= 80A
r
D
,
D
T
J
, Junction Temperature
[
o
C
]
10
0
10
1
10
2
10
0
10
1
10
2
10
3
20
μ
s
100
μ
s
1ms
10ms
DC
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
25
50
75
100
125
CURRENT LIMITED
BY PACKAGE
I
D
,
T
C
, Case Temperature
[
o
C
]
10
-5
10
-4
10
t
1
, Square Wave Pulse Duration [sec]
-3
10
-2
10
-1
10
0
10
1
10
2
1E-3
0.01
0.1
0.01
0.1
0.2
0.05
0.02
* Notes :
1. Z
θ
JC
(t) = 0.62
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
D = 0.5
Single pulse
Z
θ
J
(
t
1
P
DM
t
2
相关PDF资料 |
PDF描述 |
|---|---|
| FDP5N50 | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| FDPF5N50 | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| FDP6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDP61N20 | 200V N-Channel MOSFET |
| FDP65N06 | 60V N-Channel MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP5N50 | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP5N50_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET |
| FDP5N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55ヘ |
| FDP5N50F_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55?? |
| FDP5N50NZ | 功能描述:MOSFET N-Chan UniFET2 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。