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参数资料
| 型号： | FDP5800 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 80 A, 60 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 575K |
| 代理商： | FDP5800 |
F
FDP5800 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
10000
Figure 6. Gate Charge Characteristics
0.1
V
DS
,Drain-Source Voltage[V]
1
10
100
3
0.03
400
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 10.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
I
D
,
5
1
2
3
4
5
0.1
1
10
100
1000
150
o
C
-55
o
C
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
V
DS
= 6V
0
40
80
120
160
200
4.0
4.5
5.0
5.5
* Note : T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
m
]
,
D
I
D
, Drain Current [A]
0.2
0.4
V
SD
, Body Diode Forward Voltage [V]
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
GS
= 0V
150
o
C
I
S
,
25
o
C
10
-1
10
0
10
1
1500
3000
4500
6000
7500
9000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
100
30
0
20
40
60
80
100
120
0
2
4
6
8
10
* Note : I
D
= 80A
V
DS
= 25V
V
DS
= 35V
V
DS
= 50V
V
G
,
Q
g
, Total Gate Charge [nC]
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