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参数资料
| 型号： | FDP6030L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 52 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 473K |
| 代理商： | FDP6030L |
April 1998
FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_________________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise note
Symbol
Parameter
FDP6030L
FDB6030L
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
±20
V
Drain Current - Continuous
52
A
- Pulsed
156
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
75
W
Derate above 25
°
C
0.5
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
J A
Thermal Resistance, Junction-to-Case
2
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP6030L Rev.C
1
52 A, 30 V. R
DS(ON)
= 0.0135
@ V
GS
=10 V
R
DS(ON)
= 0.020
@ V
GS
=4.5 V
.
Improved replacement for
NDP6030L/NDB6030L.
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
in-line power loss, and resistance to transients are needed.
S
D
G
1998 Fairchild Semiconductor Corporation
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相关代理商/技术参数 |
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|---|---|
| FDP6035AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6035AL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| FDP6035AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6035L | 功能描述:MOSFET N-Ch PowerTrench Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP603AL | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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