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参数资料
| 型号： | FDP6030L |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 52 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 473K |
| 代理商： | FDP6030L |
FDP6030L Rev.C
1
Typical Electrical Characteristics
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
7.0
6.0
4.0
4.5
5.0
3.5
V = 10V
3.0
5.5
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
D
R
D
V = 10V
I = 26A
1
2
3
4
5
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = 10V
125°C
T = -55°C
25°C
Figure 5. Transfer Characteristics
.
0
20
40
60
80
100
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
R
D
4.5
5.0
10
4.0
6.0 7.0
V =3.5V
5.5
Figure 1. On-Region Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
10
60
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
A
25°C
-55°C
V =0V
2
4
6
8
10
0
0.01
0.02
0.03
0.04
0.05
V , GATE TO SOURCE VOLTAGE (V)
R
D
25°C
I = 26A
T = 125°C
Figure 3. On-Resistance Variation
with Temperature
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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相关代理商/技术参数 |
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|---|---|
| FDP6035AL | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6035AL | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| FDP6035AL_Q | 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP6035L | 功能描述:MOSFET N-Ch PowerTrench Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP603AL | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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