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参数资料
| 型号： | FDPF55N06 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 55 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 1188K |
| 代理商： | FDPF55N06 |
2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
1
www.fairchildsemi.com
F
UniFET
TM
FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
55A, 60V, R
DS(on)
= 0.022
@V
GS
= 10 V
Low gate charge ( typical 30 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FDP55N06
FDPF55N06
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
60
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
55
34.8
220
55 *
34.8 *
220 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
25
480
55
11.4
4.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
114
0.9
48
0.4
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
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相关代理商/技术参数 |
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|---|---|
| FDPF5N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5A, 1.4ヘ |
| FDPF5N50FT | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50FT_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 4.5A, 1.55?? |
| FDPF5N50NZ | 功能描述:MOSFET UniFET2 500V N-chan RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, UNITFET, 500V, 4.5A, TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFETUNITFET 500V 4.5A TO-220F |
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