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参数资料
| 型号： | FDP65N06 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 60V N-Channel MOSFET |
| 中文描述： | 65 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 607K |
| 代理商： | FDP65N06 |
2
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FDP65N06 Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47
μ
H, I
AS
=65A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
65A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP65N06
FDP65N06
TO-220
--
--
50
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
60
--
--
V
Breakdown Voltage Temperature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.5
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, T
C
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
--
--
1
μ
A
--
--
10
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 32.5 A
V
DS
= 40 V, I
D
= 32.5 A
(Note 4)
2.0
--
4.0
V
Static Drain-Source On-Resistance
--
0.013
0.016
Forward Transconductance
--
39
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1670
2170
pF
Output Capacitance
--
464
600
pF
Reverse Transfer Capacitance
--
35
52
pF
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 65A,
R
G
= 25
(Note 4, 5)
--
24
58
ns
t
r
Turn-On Rise Time
--
94
200
ns
t
d(off)
Turn-Off Delay Time
--
98
210
ns
t
f
Turn-Off Fall Time
--
52
114
ns
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 65A,
V
GS
= 10 V
(Note 4, 5)
--
33
43
nC
Q
gs
Gate-Source Charge
--
10
--
nC
Q
gd
Gate-Drain Charge
--
11
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
65
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
260
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 65 A
V
GS
= 0 V, I
S
= 65 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
62
--
ns
Reverse Recovery Charge
--
132
--
nC
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