参数资料
型号: FDP6670AS
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 30V N-Channel PowerTrench SyncFET
中文描述: 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, 3 PIN
文件页数: 4/5页
文件大小: 156K
代理商: FDP6670AS
FDP6670AL/FDB6670AL Rev D(W)
Typical Characteristics
0
2
4
6
8
10
0
10
30
40
50
Q
g
, 20
V
G
,
I
D
= 80A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
0
5
15
20
25
30
V
DS
, D10
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
100μs
100mS
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 2.2
o
C/W
T
A
= 25
o
C
10mS
10μs
1mS
0
1000
2000
3000
4000
5000
0.00001
0.0001
0.001
t
1
, TIME (sec)
0.01
0.1
1
P
SINGLE PULSE
R
θ
JC
= 2.2°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.00001
0.1
1
0.0001
0.001
0.01
0.1
1
t
1
, TIME (sec)
r
T
R
θ
JC
(t) = r(t) * R
θ
JA
R
θ
JA
= 2.2 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
F
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