- 您现在的位置：买卖IC网 > PDF目录19128 > FDP75N08A (Fairchild Semiconductor)MOSFET N-CH 75V 75A TO-220 PDF资料下载
参数资料
| 型号： | FDP75N08A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 75A TO-220 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-220 Pkg |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 37.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 104nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4468pF @ 25V |
| 功率 - 最大： | 137W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
| 产品目录页面： | 1607 (CN2011-ZH PDF) |
December 2013
FDP75N08A
N-Channel UniFET TM MOSFET
75 V, 75 A, 1 1 m ?
Features
Description
?
?
?
?
?
75 A, 75 V, R DS(on) = 1 1 m ? @ V GS = 10 V
Low G ate C harge ( Typ. 145 nC)
Low Crss ( Typ. 86 pF)
Fast Switching
Improved dv/dt C apability
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GD
S
Absolute Maximum Ratings
TO-220
T C = 25°C unless otherwise noted .
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FDP75N08A
75
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
75
47
A
A
I DM
Drain Current
- Pulsed
(Note 1)
300
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate A bove 25°C
Operating and Storage Temperature Range
Maximum L ead T emperature for S oldering,
1/8 " from C ase for 5 S econds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1738
75
13.7
4.5
137
1.09
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case , Max.
Thermal Resistance, Junction-to-Ambient , Max.
FDP75N08A
0.91
62.5
Unit
°C / W
°C / W
?2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| 553-2232F | LED CBI 3MM BI-LVL YLW/GRN TINT |
| 553-2232-100F | LED CBI 3MM BI-LVL YLW/GRN TINT |
| 586-4605-105F | LED BLUE 28V S8 BAYONET BASED |
| 586-4602-103F | LED 15MM BAYONET GREEN 14V |
| 586-4606-105F | LED 15MM BAYONET WHITE 28V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP79N15 | 功能描述:MOSFET 150V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP79N15_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FDP7N50 | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP7N50_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP7N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM |
发布紧急采购，3分钟左右您将得到回复。