参数资料
型号: FDP75N08A
厂商: Fairchild Semiconductor
文件页数: 4/8页
文件大小: 0K
描述: MOSFET N-CH 75V 75A TO-220
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MOSFET TO-220 Pkg
标准包装: 50
系列: UniFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 75V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 11 毫欧 @ 37.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 4468pF @ 25V
功率 - 最大: 137W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
产品目录页面: 1607 (CN2011-ZH PDF)
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
(Continued)
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
0.8
* Not s :
1. V GS = 0 V
2. I D = 250 μ A
0.5
0.0
* N tes :
1. V GS = 10 V
2. I D = 37.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
10
o
Figure 9. Maximum Safe Operating Area
3
Figure 10. Maximum Drain Current
vs. Case Temperature
100
o
10 μ s
80
10
2
1ms
100 μ s
10ms
60
10
1
Operation in This Area
is Limited by R DS(on)
100ms
DC
40
10
1. T C = 25 C
2. T J = 150 C
0
* Notes :
o
o
3. Single Pulse
20
10
10
10
10
-1
0
1
2
0
25
50
75
100
125
150
T C , Case Temperature [ C]
10
V DS , Drain-SourceVoltage[V]
Figure 11. Transient Thermal Response Curve
0
D=0.5
0.2
o
10
-1
0.1
0.05
P DM
0.02
0.01
* Notes :
t 1
t 2
10
1. Z θ JC (t) = 0.91 C/W Max.
-2
single pulse
0
2. Duty Factor, D=t 1 /t 2
3. T JM - T C = P DM * Z θ JC (t)
10
10
10
10
10
10
10
-5
-4
-3
-2
-1
0
1
t 1 , Square Wave Pulse Duration [sec]
?2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
4
www.fairchildsemi.com
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