参数资料
型号: FDP75N08A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 75V N-Channel MOSFET
中文描述: 75 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220, 3 PIN
文件页数: 1/8页
文件大小: 636K
代理商: FDP75N08A
2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. A2
1
www.fairchildsemi.com
F
July 2006
UniFET
TM
FDP75N08A
75V N-Channel MOSFET
Features
75A, 75V, R
DS(on)
= 0.011
@V
GS
= 10 V
Low gate charge ( typical 145nC)
Low Crss ( typical 86pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220
FDP Series
G
S
D
Symbol
Parameter
FDP75N08A
Units
V
DSS
I
D
Drain-Source Voltage
75
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
75
A
47
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
300
A
Gate-Source Voltage
±
20
V
Single Pulsed Avalanche Energy
(Note 2)
1738
mJ
Avalanche Current
(Note 1)
75
A
Repetitive Avalanche Energy
(Note 1)
13.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
137
W
- Derate above 25°C
1.09
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FDP75N08A
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.91
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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