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| 型号： | FDP79N15 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 150V N-Channel MOSFET |
| 中文描述： | 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 1259K |
| 代理商： | FDP79N15 |
2006 Fairchild Semiconductor Corporation
FDP79N15 / FDPF79N15 Rev. A
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
79A, 150V, R
DS(on)
= 0.03
Ω
@V
GS
= 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
V
DSS
I
D
Drain-Source Voltage
150
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
79
50
79*
50*
A
A
I
DM
Drain Current
(Note 1)
316
316*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1669
mJ
Avalanche Current
(Note 1)
79
A
Repetitive Avalanche Energy
(Note 1)
46.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
463
3.7
31
0.25
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.27
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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| FDPF79N15 | 150V N-Channel MOSFET |
| FDP7N50U | 500V N-Channel MOSFET |
| FDPF7N50U | 500V N-Channel MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDP79N15_07 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:150V N-Channel MOSFET |
| FDP7N50 | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDP7N50_0704 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP7N50F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM |
| FDP7N50U | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
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