- 您现在的位置：买卖IC网 > PDF目录375780 > FDPF7N50 (FAIRCHILD SEMICONDUCTOR CORP) 500V N-Channel MOSFET PDF资料下载
参数资料
| 型号： | FDPF7N50 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220F, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 327K |
| 代理商： | FDPF7N50 |
2007 Fairchild Semiconductor Corporation
FDP7N50/FDPF7N50 REV. A
1
www.fairchildsemi.com
F
March 2007
UniFET
TM
FDP7N50
/FDPF7N50
500V N-Channel MOSFET
Features
7A, 500V, R
DS(on)
= 0.9
Ω
@V
GS
= 10 V
Low gate charge ( typical 12.8 nC)
Low C
rss
( typical 9 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
Symbol
Parameter
FDP7N50
FDPF7N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
7
4.2
7 *
4.2 *
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
28
28 *
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
7
A
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
89
0.71
39
0.31
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
300
°
C
Symbol
Parameter
FDP7N50
FDPF7N50
Unit
R
θ
JC
R
θ
CS
Thermal Resistance, Junction-to-Case
1.4
3.2
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
相关PDF资料 |
PDF描述 |
|---|---|
| FDP8030L | N-Channel Logic Level PowerTrench MOSFET |
| FDB8030L | N-Channel Logic Level PowerTrench MOSFET |
| FDP8441 | N-Channel PowerTrench MOSFET (40V, 80A, 2.7mohm) |
| FDP8447L | N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ |
| FDP8860 | N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF7N50F | 功能描述:MOSFET 500V 6A 1.15Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF7N50U | 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF7N50U_G | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 500V 5A TO-220F |
| FDPF7N60NZ | 功能描述:MOSFET 600V NChannel MOSFET UniFET-II RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF8N50NZ | 功能描述:MOSFET UniFET2 500V N-chan RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。