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参数资料
| 型号： | FDPF12N35 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 350V N-Channel MOSFET |
| 中文描述： | 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220F, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 797K |
| 代理商： | FDPF12N35 |
2006 Fairchild Semiconductor Corporation
FDPF12N35 Rev. A
1
www.fairchildsemi.com
F
UniFET
TM
February 2006
FDPF12N35
350V N-Channel MOSFET
Features
7.5A, 350V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 18 nC)
Low C
rss
( typical 15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
{
{
S
{
G
z
z
z
D
TO-220F
FDPF Series
G
S
D
Symbol
Parameter
FDPF12N35
Unit
V
DSS
I
D
Drain-Source Voltage
350
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
7.5
4.5
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
30
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
335
mJ
Avalanche Current
(Note 1)
7.5
A
Repetitive Avalanche Energy
(Note 1)
5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
50
0.35
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
2.5
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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| FDPF12N50NZT | 功能描述:MOSFET N-CH 500V 11.5A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:UniFET-II™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| FDPF12N50T | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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