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参数资料
| 型号： | FDPF33N25 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 33 A, 250 V, 0.094 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 799K |
| 代理商： | FDPF33N25 |
2006 Fairchild Semiconductor Corporation
FDPF33N25 Rev A
1
www.fairchildsemi.com
F
May 2006
UniFET
TM
FDPF33N25
250V N-Channel MOSFET
Features
20A, 250V, R
DS(on)
= 0.094
Ω
@V
GS
= 10 V
Low gate charge ( typical 36.8 nC)
Low C
rss
( typical 39 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF33N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
20
12
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
80
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
918
mJ
Avalanche Current
(Note 1)
20
A
Repetitive Avalanche Energy
(Note 1)
9.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
94
0.76
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
1.32
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| FDPF33N25TRDTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDPF33N25TYDTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| FDPF3860TYDTU | 功能描述:MOSFET Trans N-Ch 100V 20A Rail RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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