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参数资料
| 型号： | FDPF51N25 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | FDPF51N25 |
| 中文描述： | 28 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 851K |
| 代理商： | FDPF51N25 |
2006 Fairchild Semiconductor Corporation
FDPF51N25 Rev. A
1
www.fairchildsemi.com
F
June 2006
UniFET
TM
FDPF51N25
28A, 250V N-Channel MOSFET
Features
R
DS(on)
= 0.060
Ω
@ V
GS
= 10 V
Low gate charge ( typical 55 nC)
Low C
rss
( typical 63 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistorsare produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF51N25
Unit
V
DSS
I
D
Drain-Source Voltage
250
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
28
16.8
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
112
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1111
mJ
Avalanche Current
(Note 1)
28
A
Repetitive Avalanche Energy
(Note 1)
11.7
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
117
0.93
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
1.07
°
C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°
C/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF51N25RDTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDPF51N25YDTU | 功能描述:MOSFET 250V 28A N-CH UNIFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF52N20T | 功能描述:MOSFET 200V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF55N06 | 功能描述:MOSFET 60V 55A N-Chan UniFET MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5A, 1.4ヘ |
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