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参数资料
| 型号： | FDPF51N25 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | FDPF51N25 |
| 中文描述： | 28 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 851K |
| 代理商： | FDPF51N25 |
4
www.fairchildsemi.com
FDPF51N25 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 25.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
1010 ms
DC
1 ms
10
μ
s
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
30
40
50
60
I
D
,
T
C
, Case Temperature [
o
C]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
* N o te s :
1 . Z
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
θ
J C
( t) = 0 .3 9
o
C /W M a x .
D M
* Z
θ
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
(
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
t
1
P
DM
t
2
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF51N25RDTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDPF51N25YDTU | 功能描述:MOSFET 250V 28A N-CH UNIFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF52N20T | 功能描述:MOSFET 200V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF55N06 | 功能描述:MOSFET 60V 55A N-Chan UniFET MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF5N50 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5A, 1.4ヘ |
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