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参数资料
| 型号： | FDPF12N50T |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 11.5A TO-220F |
| 产品目录绘图： | MOSFET TO-220F |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 650 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1315pF @ 25V |
| 功率 - 最大： | 42W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
November 2013
FDP12N50 / FDPF12N50T
N-Channel UniFET TM MOSFET
500 V, 11.5 A, 650 m Ω
Features
? R DS(on) = 550 m Ω (Typ.) @ V GS = 10 V, I D = 6 A
? Low Gate Charge (Typ. 22 nC)
? Low C rss (Typ. 11 pF)
? 100% Avalanche Tested
? RoHS Compliant
Applications
Description
UniFET TM MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP12N50
FDPF12N50T
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
11.5
6.9
±30
11.5 *
6.9 *
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate Above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
165
1.33
456
11.5
16.7
4.5
46 *
42
0.3
A
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N50
FDPF12N50T
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.75
62.5
3.0
62.5
o
C/W
?2012 Fairchild Semiconductor Corporation
FDP12N50 / FDPF12N50T Rev. C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF12N50UT | MOSFET N-CH 500V TO-220F-3 |
| FDPF12N60NZ | MOSFET N-CH 600V TO-220F-3 |
| FDPF13N50FT | MOSFET N-CH 500V 12A TO-220F |
| FDPF14N30T | MSOFET N-CH 300V 14A TO-220F |
| FDPF15N65YDTU | MOSFET N-CH 650V 15A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF12N50UT | 功能描述:MOSFET 500V 10A N-Chan Ultra FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF12N60NZ | 功能描述:MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF13N50FT | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF13N50FT_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54?? |
| FDPF13N50NZ | 功能描述:MOSFET N-CH UNIFET2 SINGLE GAGE 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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