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参数资料
| 型号： | FDPF12N60NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V TO-220F-3 |
| 标准包装： | 50 |
| 系列： | UniFET-II™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 650 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1676pF @ 25V |
| 功率 - 最大： | 39W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
November 2013
FDP12N60NZ / FDPF12N60NZ
N-Channel UniFET TM II MOSFET
600 V, 12 A, 650 m Ω
Features
? R DS(on) = 530 m Ω (Typ.) @ V GS = 10 V, I D = 6 A
? Low Gate Charge (Typ. 26 nC)
? Low C rss (Typ. 12 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
? LCD/ LED/ PDP TV
? Lighting
? Uninterruptible Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDP12N60NZ FDPF12N60NZ
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
12
7.2
±30
12*
7.2*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
48
48*
A
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
565
12
24
20
10
mJ
A
mJ
V/ns
V/ns
P D
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
240
2.0
39
0.3
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N60NZ FDPF12N60NZ
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.52
62.5
3.2
62.5
o
C/W
?2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C2
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF13N50FT | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF13N50FT_12 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 12A, 0.54?? |
| FDPF13N50NZ | 功能描述:MOSFET N-CH UNIFET2 SINGLE GAGE 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF14N30 | 功能描述:MOSFET 300V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF14N30T | 功能描述:MSOFET N-CH 300V 14A TO-220F RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:UniFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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