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参数资料
| 型号： | FDPF16N50UT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 15A TO-220F-3 |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 15A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 480 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1945pF @ 25V |
| 功率 - 最大： | 38.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
November 2013
FDPF16N50UT
N-Channel UniFET TM Ultra FRFET TM MOSFET
500 V, 15 A, 48 0 m ?
Features
? R DS(on) = 370 m ? ( Typ.) @ V GS = 10 V, I D = 7.5 A
? Low G ate C harge (Typ. 32 nC)
? Low C rss (Typ. 20 pF)
? 100% A valanche T ested
? Improved dv/dt C apability
? RoHS C ompliant
Applications
? LCD/LED/PDP T V
? Lightin g
? Uninterruptible Power Suppl y
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on-state resistance, and to provide
better switching performance and higher avalanche energy strength.
UniFET Ultra FRFET TM MOSFET has much superior body diode
reverse recovery performance. Its t rr is less than 50nsec and the
reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs
have over 200nsec and 4.5V/nsec respectively. Therefore UniFET
Ultra FRFET MOSFET can remove additional component and improve
system reliability in certain applications that require performance
improvement of the MOSFET’s body diode. This device family is
suitable for switching power converter applications such as power
factor correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted .
Symbol
V DSS
V GSS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDPF16N50UT
500
±30
Unit
V
V
I D
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
15*
9*
A
I DM
Drain Current
- Pulsed
(Note 1)
60*
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
610
15
20
20
38.5
0.3
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
o C
o C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R ? JC
R ? JA
Parameter
Thermal Resistance, Junction to Case , Max.
Thermal Resistance, Junction to Ambient , Max.
FDPF16N50UT
3.3
62.5
Unit
o C/W
?2009 Fairchild Semiconductor Corporation
FDPF16N50UT Rev C1
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDPF17N60NT | MOSFET N-CH 600V TO-220F-3 |
| FDPF18N20FT | MOSFET N-CH 200V 18A TO-220F-3 |
| FDPF18N50T | MOSFET N-CH 500V 18A TO-220F |
| FDPF190N15A | MOSFET N-CH 150V 27.4A TO-220F |
| FDPF20N50FT | MOSFET N-CH 500V 20A TO-220F |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDPF17N45T | 功能描述:MOSFET UniFET 450V 17A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF17N60NT | 功能描述:MOSFET UniFET2 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF18N20F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 200V, 18A, 0.145ヘ |
| FDPF18N20FT | 功能描述:MOSFET UniFET 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF18N20FT_G | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 18A TO220F |
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