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参数资料
| 型号： | FDPF17N60NT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V TO-220F-3 |
| 标准包装： | 50 |
| 系列： | UniFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 340 毫欧 @ 8.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3040pF @ 25V |
| 功率 - 最大： | 62.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，成形引线 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
| 其它名称： | FDPF17N60NT-ND FDPF17N60NTFS |
December 2013
FDPF17N60NT
N-Channel UniFET TM II MOSFET
600 V, 17 A, 340 m Ω
Features
? R DS(on) = 290 m Ω (Typ.) @ V GS = 10 V, I D = 8.5 A
? Low Gate Charge (Typ. 48 nC)
? Low C rss (Typ. 23 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? RoHS Compliant
Applications
Description
UniFET TM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel
display (FPD) TV power, ATX and electronic lamp ballasts.
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
? AC-DC Power Supply
D
D
G
S
TO-220F
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted*
Symbol
V DSS
Drain to Source Voltage
Parameter
FDPF17N60NT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±30
17*
10.2*
V
A
I DM
Drain Current
- Pulsed
(Note 1)
68*
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
838
17
24.5
10
62.5
0.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDPF17N60NT
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.0
62.5
o
C/W
?2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FDPF18N20F | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 200V, 18A, 0.145ヘ |
| FDPF18N20FT | 功能描述:MOSFET UniFET 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF18N20FT_G | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 18A TO220F |
| FDPF18N50 | 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDPF18N50T | 功能描述:MOSFET 500V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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