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参数资料
| 型号： | FDPF44N25 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 44 A, 250 V, 0.069 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220F, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 891K |
| 代理商： | FDPF44N25 |
3
www.fairchildsemi.com
F
FDPF44N25 Rev A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperatue
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
レ
s Pulse Test
∝
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
レ
s Pulse Test
2. T
C
= 25
∩
∝
I
D
,
V
DS
, Drain-Source Voltage [V]
0
25
50
I
D
, Drain Current [A]
75
100
125
150
0.04
0.06
0.08
0.10
V
GS
= 20V
V
GS
= 10V
Note : T
∝
J
= 25
∩
R
D
ヘ
D
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
∩
Notes :
1. V
GS
= 0V
2. 250
レ
s Pulse Test
∝
25
∩
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
∝
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
Q
G
, Total Gate Charge [nC]
30
40
50
60
70
0
2
4
6
8
10
12
V
DS
= 125V
V
DS
= 200V
V
DS
= 50V
Note : I
∝
D
= 44A
V
G
,
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